R S Balmer, I Friel, S Hepplestone, J Isberg, M J Uren, M L Markham, N L Palmer, J Pilkington, P Huggett, S Majdi, and R Lang
J. Appl. Phys., 113, (2013)
Boron delta-doped diamond structures have been synthesized using microwave plasma chemical vapor deposition and fabricated into FET and gated Hall bar devices for assessment of the electrical characteristics. A detailed study of variable temperature Hall, conductivity, and field-effect mobility measurements was completed. This was supported by Schrödinger-Poisson and relaxation time calculations based upon application of Fermi's golden rule. A two carrier-type model was developed with an activation energy of ∼0.2 eV between the delta layer lowest subband with mobility ∼1 cm²/Vs and the bulk valence band with high mobility. This new understanding of the transport of holes in such boron delta-doped structures has shown that although Hall mobility as high as 900 cm²/Vs was measured at room temperature, this dramatically overstates the actual useful performance of the device.
© 2013 American Institute of Physics
An impedance spectroscopic investigation of the electrical properties of delta-doped diamond structure
N Tumilty, J Welch, R Lang, C Wort, R Balmer, and R B Jackman
J. Appl. Phys. 106, (2009)
Impedance spectroscopy has been used to investigate the conductivity displayed by diamond doped with boron in an intrinsic-∂-layer-intrinsic multilayer system with differing ∂-layer thicknesses. Carrier transport within 5nm ∂-layer structures is complex, being dominated by conduction in the interfacial regions between the ∂-layer and the intrinsic regions, as well as conduction within the ∂-layer itself. In the case of 3.2 nm thick ∂-layers the situation appears improved with uncapped samples supporting only two conduction paths, one of which may be associated with transport outside the ∂-layer, the other low transport within the ∂-layer complex diamond structures. Introduction of the capping layer creates a third conduction within the ∂-layer associated with unwanted boron in the capping layer-∂-layer interface.
© 2009 American Institute of Physics
R Lang, C Wort, R Balmer, I Friel, G Scarsbrook
2nd International Industrial Diamond Conference, 2007
Current semiconducting materials (Si and GaAs) are limited in the power (or power density) that they can offer for the next generation of high-power microwave sub-systems. Such systems are likely to require compact, low-mass, low-cost, reliable solutions for a range of applications that, perhaps, to date have been dominated by Travelling Wave Tubes (TWTs). Wide band gap materials such as GaN, SiC and diamond all offer substantial potential for such RF devices, with diamond having by far the best combination of material characteristics.